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用改进的图形结构测量金属/薄层半导体的接触电阻率

Improved Test Pattern for Measuring Contact Specific Resistance of Mete1/Thin Semiconductor Layer

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【作者】 华文玉; 陈存礼;

【Author】 Hua Wenyu(Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094)Chen Cunli(Department of Physics, Nenjing University, Nanjing 210093)

【机构】 南京理工大学应用物理系!南京; 210094; 南京大学物理系!南京; 210093;

【摘要】 提出一种诊断金属/薄层半导体欧姆接触质量的改进测试图形──单点圆环结构模型.本结构不仅样品制备简单,只需做上一个小圆点和一个同心的圆环接触,无需台面绝缘,而且还有多样的灵活性.整个测试都是定域在一个小圆环内,无需考虑边界效应以及邻近其他图形的影响.发展和讨论了此模型的两种演变结构形式,使之更为简捷实用.所得结果与文献的报道一致.

【Abstract】 An improved test pattern-A dot with concentric ring configuration model-to characterize ohmic contact quality of metal/thin semiconductor layer is developed. The test pattern needs only one dot with concentric ring, the mesa isolation of the contact pattern is omitted, thus the sample fabrication is simplified. Boundary effect and influence 0f nearby other patterns are not considered, because the tests are located in the ring. It has a great diversity of variety configuration, two evolution structures are developed and discussed. The experiment results are in good agreement with that of references.

  • 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1997年11期
  • 【分类号】TN304
  • 【被引频次】7
  • 【下载频次】177
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