【摘要】 蓝宝石是生长GaN材料最常用的衬底，本文研究了H2SO4和H3PO4的混合酸液的温度、混合酸的比例以及腐蚀时间对蓝宝石腐蚀速率的影响．发现在H2SO4：H3PO4=3：1的溶液中的腐蚀速率是由表面化学反应速率所控制．利用X射线双晶衍射对除去蓝宝石表面的机械损伤层情况进行了测量．更多还原

【Abstract】 Sapphire(α-Al2O3) is the substrate widely used in the growth of GaN. The dependence of its etching rate on polishing solution composition and temperature are investigated. The removal of mechanically damaged layer in sapphire is studied by double crystal X-ray diffraction. It is found that the removal rate of sapphire in H2SO4:H3PO4= 3: 1 mixture is controlled by surface chemical kinetics.更多还原