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Al:Ti合金栅a-Si TFT研究
Study of a-Si TFTs With Al:Ti Alloy Gate Line
【摘要】 本文报道一种低阻高化学稳定的Al∶Ti合金的制备方法及其在a-SiTFT中的应用.所获Al∶Ti合金电极材料的电阻率可达6.6μΩ·cm,与纯铝的相近.Ti的加入使Al∶Ti合金惰性增强,有效地抑制了小丘(Hillock)的产生和阳极氧化时的被腐蚀现象.采用Al∶Ti合金栅和Al2O3/SiNx双层绝缘层的a-SiTFT有着与采用Ta栅和单层SiNx绝缘层的a-SiTFT相近的I-V参数,但前者稳定性明显提高.经+10V栅偏压处理1小时,未见VT漂移.这种双层冗余技术还能有效提高成品率.
【Abstract】 The method of preparing Al∶Ti alloy film with low resistivity and high chemical stability, and its use in a-Si TFTs are reported. Its resistivity is about 6.6μΩ. cm which is nearly equal to the one of pure Al film. The Al∶Ti alloy film can effectively suppress the formation of hillock and the phenomenon that Al is etched out during anodization. The I-V characteristic of a-Si TFT with Al∶Ti alloy gate line and Al2O3/SiNx double insulator is similar to the one of a-Si TFT with Ta gate line and SiNx insulator. But the former stability is better than the latter one. The former VT does almost not change under +10V bias for 1 hour. The technology of double gate insulator can also improve the yield of a- Si TFT matrix.
- 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1997年10期
- 【分类号】TN304
- 【被引频次】1
- 【下载频次】64