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Al:Ti合金栅a-Si TFT研究

Study of a-Si TFTs With Al:Ti Alloy Gate Line

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【作者】 熊绍珍赵颖王宗畔谷纯芝王丽莉李俊峰周祯华代永平姚伦

【Author】 Xiong Shaozhen; Zhao Ying; Wang Zongpan; Gu Chunzhi; Wang Lili;Li Junfeng; Zhou Zhenhua; Dai Yongping and Yao Lun (Institute of Photoelectronic Thin Film Devices and Technology,Optical Information Science Laboratory, Nankai University, Tianjin 300071)

【机构】 南开大学光电子所光学信息技术科学开放研究实验室!天津300071南开大学光电子?

【摘要】 本文报道一种低阻高化学稳定的Al∶Ti合金的制备方法及其在a-SiTFT中的应用.所获Al∶Ti合金电极材料的电阻率可达6.6μΩ·cm,与纯铝的相近.Ti的加入使Al∶Ti合金惰性增强,有效地抑制了小丘(Hillock)的产生和阳极氧化时的被腐蚀现象.采用Al∶Ti合金栅和Al2O3/SiNx双层绝缘层的a-SiTFT有着与采用Ta栅和单层SiNx绝缘层的a-SiTFT相近的I-V参数,但前者稳定性明显提高.经+10V栅偏压处理1小时,未见VT漂移.这种双层冗余技术还能有效提高成品率.

【Abstract】 The method of preparing Al∶Ti alloy film with low resistivity and high chemical stability, and its use in a-Si TFTs are reported. Its resistivity is about 6.6μΩ. cm which is nearly equal to the one of pure Al film. The Al∶Ti alloy film can effectively suppress the formation of hillock and the phenomenon that Al is etched out during anodization. The I-V characteristic of a-Si TFT with Al∶Ti alloy gate line and Al2O3/SiNx double insulator is similar to the one of a-Si TFT with Ta gate line and SiNx insulator. But the former stability is better than the latter one. The former VT does almost not change under +10V bias for 1 hour. The technology of double gate insulator can also improve the yield of a- Si TFT matrix.

【基金】 国家自然科学基金;天津市青年基金!(69577011)
  • 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1997年10期
  • 【分类号】TN304
  • 【被引频次】1
  • 【下载频次】64
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