节点文献
硅基纳米SiC的制备及其微结构分析
Preparation of Si-Based Nanocrystalline SiC and its Microstructure Analises
【摘要】 在室温下将C+注入硅衬底，注入能量和剂量分别为50keV，2×1016cm－2．经高温退火形成，β-SiC颗粒沉淀．用傅里叶变换红外吸收谱，光电子能谱以及高分辨率透射电镜对注入样品中的纳米β-SiC及其微结构作了分析．
【Abstract】 Carbon ions were implanted into Si substrates at an energy of 50keV with a dose of 2 × 1016/cm2 at room temperature. After high temperature annealing, the precipitates of β-SiC were foremed. The formation and microstructure of nanocrystalline β-SiC is studied by using Fourier transform infrared spectroscope, X-ray photo-emission spectroscpy and high resolution transmission electron microscope.
【基金】 国家自然科学基金
- 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1997年10期
- 【分类号】TN304
- 【被引频次】8
- 【下载频次】181