【摘要】 本文利用光致发光测量了不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响．退火使量子点发光峰蓝移，发光强度减弱．深埋的量子点承受更大的应变，应变使退火引起的互扩散加强．GaAs盖层越厚，量干点的互扩散越明显，发光峰蓝移越显著，并由此导致了发光峰半高宽的不同变化．更多还原

【Abstract】 We investigate the annealing effects of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thick GaAs cap layers. Annealing Induces a blue-shift of the QD PL peak, and a decrease of the intensity. A deeper buried dot will experience a larger strain, and the strain of QDs enhances the interdiffusion. This results in a larger blue-shift of the deeper buried QDs, and a different variance of the half width of PL peak from QDs with different thick cap layers.更多还原