【摘要】 采用具有高导热、高绝缘等优异物理性能的金刚石膜作为绝缘理层，利用金刚石膜上的薄层硅（SOD）技术，制作了54HCTO3CMOS／SOD结构的集成电路．对该电路高温下的工作特性进行了研究．结果表明SOD电路在350℃下仍具有正常的逻辑功能，其工作温度明显高于体硅电路。更多还原

【Abstract】 Diamond film with high resistivity and thermal conductivity is used as buried insulator in SOD (silicon on diamond) technology. 54HCT03 CMOS/SOD integrated circuit is fabricated by using SOD wafer. The high temperature characteristics of SOD circuit are studied, and the results show that the SOD circuit can be used at the temperature of 350℃, this working temperature is clearly higher than that of the bulk silicon circuit.更多还原