【摘要】 当激发光能量小于GaAs势垒带边能量时，在InAs量子点结构中，清楚地观察到与InAs浸润层有关的发光峰．研究表明，此发光峰主要来源于浸润层中局域态激子发光，局域化能量为12meV，发光具有二维特性．在相同的生长条件下，此发光峰位置与InAs层的厚度基本无关．这些结果有助于进一步深入研究浸润层的形貌和光学性质．更多还原

【Abstract】 Photoluminescence associated with wetting layer can unambiguously be observed in InAs quantum dot structures when the sample was excited below the band gap ofGaAs barrier. Our study shows that the luminescence originates from localized excitonstates in wetting layer with localization energy of 12meV and it exhibits two dimensionaloptical properties. Under the same growth conditions, the peak energy of the luminescence is irrelevant to InAs thickness. These results are helpful to further study the morphology and optical properties of wetting layer.更多还原