【摘要】 在位错密度不同的LEC半绝缘（SI）GaAs衬底上离子注入制做MESFETs，观察衬底位错对MESFETs旁栅效应的影响．结果表明，衬底中高位错密度可以抑制旁栅效应．更多还原

【Abstract】 GaAs MESFETs were fabricated on LEC grown semi-insulating (SI) GaAs substrates with different dislocation densities and sidegating effect measurement was performed on the GaAs MESFETs. It was found that sidegating effect in the MESFETs fabricated on the GaAs substrate of high dislocation was obviously reduced.更多还原