节点文献
自组织生长多层垂直耦合InAs量子点的研究
Vertically Coupled Multilayers of Self-Assembled InAs Quantum Dots
【摘要】 本文报道了关于InAs/GaAs自组织生长多层垂直耦合量子点的研究结果.透射电子显微镜测量显示多层量子点在生长方向上成串排列,有些量子串会发生融和.还有些量子串生长不完全,也就是说包含的量子点个数少于InAs层数,并由此导致多层耦含量子点的光致发光谱具有高能带尾.
【Abstract】 We investigate the vertically coupled multilayers of self-assembled InAs quantum dots in a GaAs matrix. Transmission electron microscopy shows that quantum dots are vertically aligned in strings and some strings growing turn into one string. Some quantum dot strings’ growth is not complete, i. e. these strings compose of less dots than InAs layer number, which is the reason why its photoluminescence spectroscopy has a obvious high energy tail.
【基金】 国家自然科学基金;国家攀登计划资助
- 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1997年07期
- 【分类号】TN304
- 【被引频次】11
- 【下载频次】110