【摘要】 对不同的O，Ce束流比条件下用离子束外延（IBE）方法生长的氧化铈／硅薄膜在热处理前和在干氧气氛中经不同温度热退火后进行了俄歇电子能谱（AES）深度剖析测量．结果显示出在Si衬底上生长的具有正化学配比的CeO2和林的低价氧化物具有明显不同的热处理行为，对与此有关物理过程作了初步探讨．结果还表明IBECeO2／Si结构经高温处理后在界面上形成了一层SiO2，而外延层内的化学配比可接近正常值，从而显示出该材料工作温度尚可提高的可能性．更多还原

【Abstract】 Auger-electron energy spectroscopic measurement has been carried out on the Ion-Beam Epitaxial (IBE) cerium oxides/Si thin films grown under different ratios of O and Ce fluxes and annealed in dry oxygen at different temperatures. The results show that the heat-treatment behavior of stoichiometric CeO2 and low valence cerium oxide grown on Si subtrate are obviously different. A SiO2 layer is formed within the interface region of IBE CeO2/Si after the high temperature heat-treatment, while the epitaxial layer keeps nearly in stoichiometric. It displays the possibility that the work temperature of the material may be increased. A brief discussion on the relevant physical processes has been made.更多还原