【摘要】 利用透过二氧化硅层进行杂质扩散的方法，获得低表面浓度浅结深并具有漂移自建场的掺杂层，制作最佳厚度的光透射膜，使硅光敏二极管的紫外响应获得改善，得到在254nm波长下响应度达0．18A／W的结果．更多还原

【Abstract】 Very shallow doped layer with low surface impurity concentration and minority carrier’s drift electric field is formed by diffusing boron through thin silicon dioxide. The thickness of the silicon dioxide layer on the sensitive region for the optimal transmit of light at the wavelength of 254nm is calculated and formed as well. We get the responsivity of the photodiode at the wavelength 254urn as high as 0. 18A/W.更多还原