【摘要】 在本文，我们用一个低组分的InxGa(1-x)As缓冲层（x～0．01），有效地限制了50周期的In0.3Ga0．7As／GaAs应变超晶格本身弛豫所产生的位错，X射线双晶衍射测量结果表明使用这样缓冲层的超晶格质量明显改善，可以观察到12级卫星峰，而在没有这个缓冲层的样品上只能观察到3个衍射卫星峰．透射电子显微镜上观察到产生的位错被限制在这个缓冲层中或弯曲进入了衬底而没有进入所需要的外延层。更多还原

【Abstract】 A low strained InGaAs (x~0.01) layer serves as a buffer layer for the growth of 50 period highly strained In0.3Ga0.7As/GaAs superlattice. X-ray diffraction suggests that the crystal quality of the highly strained superlattice with the buffer layer has been imporved greatly and over ten satellite peaks can be observed while only 3 satellite peaks can be observed in the sample without the buffer layer. The cross section transmission electron microscopy reveals that the dislocations generated by the superlattice itself strain relief are buried into the buffer layer or deep into the substrate.更多还原