【摘要】 为采用HFCVD技术在Si（111）衬底上外延3C－SiC薄层而在Si表面首先进行碳化处理．实验样品用H2稀释的碳化物气氛进行碳化处理，热丝温度约为2000℃，衬底温度在950℃到1100℃之间．用X射线衍射、电子衍射和俄歇能谱等分析手段研究了碳化层的组分及结构，发现碳化层可由合碳硅结晶层、3C－SiC结晶层和富碳的3C－SiC结晶层组成．适当控制碳化条件可以调整3C－SiC结晶层的比例．更多还原

【Abstract】 Surface of the silicon substrates on which 3C-SiC thin layers to be epitaxially grown is carbonized by using carbide gas diluted with hydrogen in a HFCVD system, with filament temperature of 2000℃ and substrate temperature of 950～1100℃. The carbonized layers were characterized by X-ray diffraction, electron diffraction and Auger electron spectroscopy etc.. It is found that the carbonized layers consist of highly carbondoped silicon sub-layer, 3C-SiC crystalline sub-layer and silicon-doped 3C-SiC crystalline sub-layer. Under appropriate processing condition, the proportion of 3C-SiC crystalline sub-layer can be adjusted.更多还原