【摘要】 综述了在电场下由绝缘态（“0”态）到导电态（“1”态）的电开关记忆特性的几类化合物薄膜，包括聚苯乙烯及其衍生物的辉光放电聚合膜，酞青铅和TCNQ（7，7，8，8-四氰基对苯酸二甲烷）及其衍生物的电荷转移复合物的真空蒸发膜．乙酰丙团铜的弧光放电等离子体聚合膜，1，3－二硫杂环戊烯-乙硫醇（dmit）类过渡金属配合物的电沉积膜，含大共轭п键有机化合物及偶氨化合物与TCNQ的电荷转移复合物的Lansmuir－Blodgett（LB）膜，以及用离子团束-飞行时间质谱仪制备的C60－TCNQ和Ag－TDCN（TDCN为多共轭苯腈）薄膜。更多还原

【Abstract】 The electric switching and memory characteristics of metal sandwich thin films devices made of organic and organic-metallic compounds, are reviewed according to their switching mechanism of electric conductive filament,charge transfer and the changes in molecular or crystal structures. These include glow discharge polymerized films of styrene and its congeners,plasma polymerized thin film of copper acetylacetonate, vacuum-vaporized films of lead phthalocyanine, charge transfer complexes of 7, 7, 8, 8-tetra-cyanoquinodimethane (TCNQ) and its derivatives,electrochemically deposited fi1ms for the complexes of 4, 5-dimercaprol-2-thione(dmit) with zinc and nickel (TT) and Langmuir-Blodgett (LB) films made of bis-(6-octylazulene) squalilium dye and a charge transfer complex of azo-dye with TCNQ,and authors’s recent work on ionized cluster beam deposited films of Ag TDCN (TDCN = toluylene-2, 4-dicarbamidonitrile) and C60TCNQ.更多还原