【摘要】 采用ＰＥＣＶＤ法，反应温度为２５０℃，反应气体为ＮＨ３，ＳｉＨ４，在抛光硅片上沉积０．２～０．４μｍ厚的氮化硅薄膜。对这种Ｓｉ３Ｎ４薄膜的光学性能和电学性能进行了测试，其光学折射率为１．８７５，电阻率及击穿场强分别为８×１０１６Ω·ｃｍ及１×１０７Ｖ／ｃｍ，并用ＦＴＩＲ谱分析了薄膜的化学结构。更多还原

【Abstract】 Silicon nitride thin films of 0.2～0.4 μm thickness were prepared by plasma enhanced chemical vapor deposition with ammonia and silane gas mixture at temperature of 250℃.The films were characterized by the measurement and study of optical properties,electrical properties and Fourier transform infrared spectroscopy. The refractive index, electrical resistivity and breakdown strength of films were 1.875, 8 ×1016Ω· cm and 1 ×107 V/cm respectively.更多还原