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氮化硅薄膜的PECVD生长及其性能研究
Properties of Plasma-enhanced Chemical-vapor-deposited Silicon Nitride Thin Films
【摘要】 采用PECVD法,反应温度为250℃,反应气体为NH3,SiH4,在抛光硅片上沉积0.2~0.4μm厚的氮化硅薄膜。对这种Si3N4薄膜的光学性能和电学性能进行了测试,其光学折射率为1.875,电阻率及击穿场强分别为8×1016Ω·cm及1×107V/cm,并用FTIR谱分析了薄膜的化学结构。
【Abstract】 Silicon nitride thin films of 0.2~0.4 μm thickness were prepared by plasma enhanced chemical vapor deposition with ammonia and silane gas mixture at temperature of 250℃.The films were characterized by the measurement and study of optical properties,electrical properties and Fourier transform infrared spectroscopy. The refractive index, electrical resistivity and breakdown strength of films were 1.875, 8 ×1016Ω· cm and 1 ×107 V/cm respectively.
【关键词】 氮化硅薄膜;
光学性能;
电学性能;
【Key words】 Silicon nitride thin films; Optical properties; Electrical properties;
【Key words】 Silicon nitride thin films; Optical properties; Electrical properties;
- 【文献出处】 真空电子技术 ,VACUUM ELECTRONICS , 编辑部邮箱 ,1996年02期
- 【分类号】TN304.24
- 【被引频次】14
- 【下载频次】286