【摘要】 本文介绍了用于测量ａ－Ｓｉ：Ｈ隙态密度的空间电荷限制电流（ＳＣＬＣ）法，并报道了采用此方法对ＰＥＣＶＤ方法制备的ａ—Ｓｉ：Ｈ材料隙态密度的测量结果。对ｎ＋ａ—Ｓｉ：Ｈ／ａ—Ｓｉ１Ｈ／ｎ＋ａ—Ｓｉ：Ｈ结构的样品，测量得到费米能级上０．１６ｅＶ间的欧态密度分布为１０１５～１０１８（ｃｍ－３ｅＶ－１）。更多还原

【Abstract】 A method of space -charge-limited -current (SCLC) is introduced to measure the energy gap density of a - Si:H,and the measurement results of a -Si:H prepared by plasma enhanced chemical vapour deposition(PECVD) is reported in this paper. In the structure of n+ a-Si:H/a -Si :H/ n+ a -Si: H,the density of energy gap which is about 0. 16 eV around Fermi level of a-Si:H is 1015～1016 (cm-3 eV-1).更多还原