节点文献

厚膜导体的金属迁移研究

Metal Migration in Thick Film Conductor

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 李自学田耀亭田树英

【Author】 Li Zixue Tial,Yaotins and Tian Shuying$(Xi’an Microelcctronics Technology Inst, Lintong ),

【机构】 西安徽电子技术研究所

【摘要】 金属迁移能导致混合微电路发生灾难性失效。本文介绍一种简单易行的测试方法──水滴试验法,来测量厚膜电路的实际金属迁移率。用此方法测量时,发现Pd-Ag导体的迁移率最大,Pt-Au导体的金属迁移率最小。并且应用电化学理论分析了Pd-Ag导体的金属迁移过程.最后根据实验及分析,提出了抑制厚膜导体金属迁移的若干措施。

【Abstract】 Metal Migration has been the cause of many catastrophic microcircuit failures. in this paper we discribed an effective and simple test-water drop test.It’s a good practice to test thick film conductor for metal migrations.Tie results was given here: Pd-Ag conductors had the highest propensity of migration,Pt-Au conductors had the lowest one. Also, metal migration in Pd-Ag conductors has been studied with electrochemical theory. Finally some ground rules to suppress of prevrnt migration have been suggested.

【关键词】 厚膜金属迁移Pd-AgAnPt-Au
【Key words】 Thick filmMetal migrationPd- Ag conductor
  • 【文献出处】 微电子学与计算机 ,MICROELECTRONICS & COMPUTER , 编辑部邮箱 ,1996年02期
  • 【分类号】TN450.7
  • 【下载频次】79
节点文献中: 

本文链接的文献网络图示:

本文的引文网络