【摘要】 本文介绍了铁电存储器的原理，对非挥发性铁电存储的研究和开发情况作了综述。并就制约着铁电集成器件真正商业化的若干铁电薄膜材料物理方面关键问题作了分析。首先提出了在铁电集成器件工艺中还存在着综合优化问题。最后，对铁电存储器的未来作了预测。更多还原

【Abstract】 In this paper, some key physical issues of ferroelectric thin film materials,which have been a great obstacle to the commercialization of ferroclectric integrated devices,and the fundamental principle of ferroelectric memories have been analyzed.analyzed.The dynamicsituation of research and development for the nonvolntile ferroelectric random access memories (FRAM)has been reviewed.First,we emphasized that therestill exists comprehensive optimization in the integration processing before completely industrializing ferroelectric integrated devices.Then,we estimate the future exploitations of FRAM.更多还原