【摘要】 本文从器件的几何、材料和工艺参数出发,获得了低功耗低噪声增强型(E型)GaAsMESFET(简称EFET,下同)模型的等效电路元件值.研究了器件的几何、材料和工艺参数及RF性能和直流功耗的关系.给出了EFET物理参数的最佳取值范围,可为超低功耗微被单片集成电路中有源器件的设计提供依据.更多还原

【Abstract】 The model of enhancement-mode GaAs MESFET (EFET) for low consumption power and low noise application? has been obtained, using a small-signal equivalent circuit with its component values derived from the physical parameters and the bias conditions. The dependence of the RF performance and the DC power consumption on physical parameters of EFET is also studied. The Optimized range of physical parameters is given which is helpful for the design of active device in ultra low power consumption MMIC.更多还原