【摘要】 ＥＥＰＲＯＭ要求场开启电压≥２０Ｖ，Ｐ－Ｎ结击穿电压也要求≥２０Ｖ，前者需提高场区杂质浓度，而后者则需要降低场区杂质浓度。通过工艺模拟和实验找到了一种化解这个矛盾的对策：首先根据Ｐ－Ｎ结击穿电压的要求确定场区杂质浓度，继而大幅度调节场氧厚度，从而使二者都能满足要求。更多还原

【Abstract】 A solution has been found through process simulation and experiment to solve the conflict between a high threshold voltage of field MOS transistors,Vtbf, which requires a higher impurity concentration in the field region, and a high breakdown voltage of p-n junction, Vbp-n, for which lower impurity concentration is necessary. Results from the experiment show that the special requirement can be met by first determining the impurities in the field region according to the given Vbp-n, and then adjusting the thickness of field SiO2 for a higher Vtbf.更多还原