【摘要】 在ＥＥＰＲＯＭ的研制中，为了研究掺砷多晶硅与单晶硅氧化的相对关系，进行了８００℃湿氧氧化和１０００℃干氧氧化实验。结果表明，经过工艺优化，选择适当的工艺方案，获得了较理想的多晶硅与单晶硅氧化速率比。更多还原

【Abstract】 To study the dependence of oxidation rate for arsenic-doped polysilicon and single crystalline silicon on the implantation dosage, an 800℃ wet oxidation and a 1000℃ dry oxidation were performed. Results from the experiments show that satisfactory ratio of polysilicon to Si oxidation rate can be achieved by using proper process scheme.更多还原