节点文献

Green-blue luminescence from nitrogen-implanted silicon after RTA

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具，请取消加速工具后下载。

【作者】 刘渝珍； 石万全； 陈建新； 李玉芝； 陈志坚； 孙景兰； 柳雪君； 刘振祥； 张裕恒； 沈光地；

【Author】 LIU Yuzhen SHI Wanquan CHEN JianxinLI Yuzhi CHEN Zhijian SUN JinglanLIU Xuejun LIU Zhenxiang ZHANG Yuhengand SHEN Guangdi(Graduate School, University of Science and Technology of China, Beijing 100039, China)Beijing Polytechnical University,Beijing 10002,ChianUniversity of Science and Technology of China,Hefei 230026,ChinaInstitute of Physics,Chinese Academy of Scienccs,Beijing 100080,China

【机构】 Graduate School； University of Science and Technology of China； Beijing 100039； China； Beijing Polytechnical University； Beijing 10002； Chian； University of Science and Technology of China； Hefei 230026； China； Institute of Physics； Chinese Academy of Scienccs； Beijing 100080； Chian；

【摘要】 <正> Study of the quantum size confinement effect has attracted much attention since the first observation of visible photoluminescence (PL) from porous silicon at room temperature. Recently great interest has risen in nanometer silicon films, because the porous silicon of loosened structure is found difficult to be used in optoelectronic function. A blue/green photoluminescence has been observed from Si thin film with nanostructures prepared by α-Si: H after rapid thermal annealing (RTA) treatments by Zhu et al. But evolution of the hydrogen from as-deposited α-Si:H film by RTA tends to break the thin films into pieces easily.

【关键词】 N4 implantation； nanocrystalline Si； rapid thermal annealing (RTA)； green-blue luminescence.；
【Key words】 N4 implantation； nanocrystalline Si； rapid thermal annealing (RTA)； green-blue luminescence.；
  • 【文献出处】 Chinese Science Bulletin ,科学通报(英文版) , 编辑部邮箱 ,1996年19期
  • 【分类号】O482.31
  • 【下载频次】13
知网节下载
节点文献中： 

本文链接的文献网络图示:

本文的引文网络
二级参考文献(0)
参考文献(0)
共引文献(0)
节点文献
同被引文献(0)
引证文献(0)
二级引证文献(0)