Study of valence band offsets of Ge/ZnS(111) heterojunctions by synchrotron radiation photoemission

【摘要】 <正> The band lineups at Ge/ZnS(111) interfaces have been studied by synchrotron radiation photoemission spectroscopy. Surface sensitive core level spectra show that Ge and S atoms react with each other at the interface. Using both the techniques of core level and valence band spectra, the valence band offsets of such a kind of heterojunctions have been measured. The values are (1.94+0.1)eV and (2.23+0.1)eV for the heterojunctions grown at the substrate temperature of 200C and room temperature, respectively. The experimental results are in good agreement with some theoretical predictions.更多还原

【Abstract】 The band lineups at Ge/ZnS(111) interfaces have been studied by synchrotron radiation photoemission spectroscopy. Surface sensitive core level spectra show that Ge and S atoms react with each other at the interface. Using both the techniques of core level and valence band spectra, the valence band offsets of such a kind of heterojunctions have been measured. The values are (1.94+0.1)eV and (2.23+0.1)eV for the heterojunctions grown at the substrate temperature of 200C and room temperature, respectively. The experimental results are in good agreement with some theoretical predictions.更多还原