【摘要】 采用Ieda提出的载流子发射的三维模型,研究了半导体中载流子的电场增强产生现象,推导出基于三维模型的产生区电流与产生区宽度的理论关系,并用于解释有关的实验结果.更多还原

【Abstract】 AbstractUsing the 3-dimensional model on the carrier emission proposed by Ieda et al, the field-enhanced carrier generation is analyzed and the theoretical relationship between generation current and generation width based on the model is proposed. The relationship can be used to explain relevant experimental results.更多还原