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掺杂对MOCVD—SnO2薄膜气敏性能的影响

Doping Effect on the Gas sensitivity of MOCVD-SnO2 Thin Film

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【作者】 赵世勇刘俊福张为灿淳于宝珠

【Author】 Zhao Shi-yong Liu Jun-fu Zhang Wei-can Chunyu Bao-zhu (Department of Chemistry, Shandong University, Jinan 250100)

【机构】 山东大学化学系山东大学化学系 济南 2501O0济南 2501O0

【摘要】 本文在小瓷管上用MOCVD技术沉积SnO2气敏薄膜,研究了Pd、Th掺杂对该SnO2元件气敏性能的影响。掺杂Pd使元件对乙醇、汽油的灵敏度均增大,而掺杂Th则仅提高了对乙醇的灵敏度,对汽油的灵敏度反有所降低。因此有希望开发为不受汽油干扰的乙醇敏感元件。

【Abstract】 SnO2 thin film was deposited on the surface of a ceramic cylindrical insulating tube by using MOCVD technique. The effects of Pd and Th on the gas sensitivity of SnO2 thin film have been invesigated. Doping of Pd increased the sensitivity both of ethanol and petrol. Different effect was observed for the doping of Th. Addition of Th increased the sensitivety of ethanol only but decreased the sensitivity of petrol. It also provides the- possibility for the fabrication of ethanol gas sensor without petrol interference by using the doping of Th.

【关键词】 掺杂MOCVDSnO2薄膜气体传感器
【Key words】 SnO2 thin filmgas sensorMOCVDdoping
  • 【文献出处】 化学传感器 ,Chemical Sensors , 编辑部邮箱 ,1996年01期
  • 【分类号】TP212
  • 【下载频次】27
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