【摘要】 用注入Ｇａ离子ＧａＡｓ／ＡｌＧａＡｓ量子阱在快速热退火中大大加快了异质结界面的互扩散，表现在ＰＬ光谱中量子阱峰值能量有３０～９０ｍｅＶ的兰移．发现兰移大小同注入损伤程度、退火的温度及时间有关，并得到快速退火中的互扩散系数Ｄ约为１０－１５～１０－１７ｃｍ２／ｓ更多还原

【Abstract】 Ga ion implantation followed by rapid thermal annealing (RTA) was utilized to enhance the interdiffusion in GaAs/AlGaAs single QWs. In low temperature photoluminescence a blue shift of emission energy from 30 to 90meV was observed. The shift was found to be dependent on the implantation damage and as a function of the annealing temperature and time. The interdiffusion coefficient of 10 -15 10 -17 cm 2/s by RTA was calculated.更多还原