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磁隧穿振荡研究GaAs/AlAs双势垒结构中的Γ-X电子态混合

Γ X MIXING IN GaAs/AlAs DOUBLE BARRIER STRUCTURES STUDIED BY MAGNETO TUNNELING OSCILLATIONS

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【作者】 刘剑李月霞郑厚植杨富华宋爱民李承芳

【Author】 Liu Jian Li Yuexia Zheng Houzhi Yang Fuhua Song Aimin Li Chengfang (National Laboratory for superlattices and Microstructures,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China)

【机构】 中国科学院半导体研究所

【摘要】 报道了非对称GaAs/AlAs双势垒结构(DBS)中的Γ-X-Γ磁隧穿振荡现象,用磁场倒数周期求得AlAs层中X谷和GaAs层中Γ谷之间的能带不连续值与通常公认值符合很好.良好的振荡特性可作为定量研究Γ-X耦合强度的灵敏的实验办法

【Abstract】 X Γ magneto tunneling oscillations in asymmetrical GaAs/AlAs double barrier structures (DBS) were reported.The band offset between the X valley in AlAs barrier and the Γ valley in GaAs well given by the period in reciprocal field was found to be very close to the commonly adopted value.Owing to the well developed oscillatory feature,a new and sensitive experimental way to quantitatively study the Γ X coupling strength was provided.

【关键词】 磁隧穿Γ-Χ混合GaAs/AlAs
【Key words】 magneto tunnelingΓ X mixingGaAs/AlAs.
【基金】 国家攀登计划资助
  • 【文献出处】 红外与毫米波学报 ,JOURNAL OF INFRARED AND MILLIMETER WAVES , 编辑部邮箱 ,1996年02期
  • 【分类号】O471.1
  • 【下载频次】26
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