【摘要】 本文报道了 LiNbO₃质子交换光波导 F-P 干涉型电场和电压传感器的结构、制备、工作原理、实验装置与测量结果.用半导体激光器（780nm）作光源,测量了器件对频率在20Hz～1KHz 电场的响应特性,着重测量并得到工频（50Hz）交流电场(幅值为8.3～75V_zms/cm)和电压(20～180V_rms)与调制光输出电压之间的关系曲线.实验研究表明:该器件的线性度为1.4%,电场灵敏度为61.4mV_rms/V_rms/cm,电压灵敏度为25.6mV_rms/V_rms;且具有结构简单、制作容易、几何尺寸小、光传输插入损耗低等优点;稍加完善,可望制成实用化器件.更多还原

【Abstract】 This paper reports an optical waveguide electric field and voltage sensor,which utilizes the Fabry-Perot interferometer configuration composed of proton-exchanged LiNbO₃ straight channel waveguide with two parallel reflectance end faces of the waveguide substrate.The principles of operation of the sensors,their fabrication,the experimental setup and results are discussed.Electric- field,in the frequency range 20Hz to 1KHz,response characteristics of the sensor were measured with semiconducor laser at 780 nm.Especially,the curves of modulation output voltage versus applied electric field intensity in the range 8.3～75V_rmscm and voltage in the range 20～180V_rms at 50Hz were measured.Measured results show that the device linearity has 1.4 %,electric field sensitivity and voltage sensitivity is 61.4mV_rms/V_rms/cm and 25.6mV_rms/V_rms,respectively.Some advantages of the devices are simpler structure,easy to fabricate,smaller size and low insertion loss for optical transmission.Practical electric field and voltage sensors,using optical-waveguide F-P interferometer, can be constructed in the near term.更多还原