【摘要】 报道了ＶＯ２薄膜在ＴＥＡＣＯ２激光照射下的相变特性的实验研究。结果表明：对于本文镀制的ＶＯ２薄膜，在偏置温度为５２°Ｃ条件下，ＴＥＡＣＯ２激光入射能量密度为１５０ｍＪ／ｃｍ２时，可使ＶＯ２薄膜发生相变。响应时间＜５０ｎｓ，恢复时间≈２００μｓ。更多还原

【Abstract】 This paper reports the experemental study of phase transition properties of VO 2 films in irradiation of TEA CO 2 laser. The experemental results show that at biasing temperature 52°C, incident fluence of 150 mJ/cm 2 for TEA CO 2 laser phase transition can be occured from semiconductor state to metal state for our VO 2 films. Response time <50 ns, restoration time≈200 μs.更多还原