节点文献
多孔硅吸收光谱的研究
The Study of the Optical Absorption Spectrum of Porous Silicon
【摘要】 利用大电流剥离方法制备了多孔硅薄膜层,测定了其吸收光谱。结果发现其吸收边对应于可见光区域,同单晶硅吸收光谱相比,其吸收边发生了蓝移,并且吸收强烈。这说明多孔硅的能带结构较硅发生了改变,表现为一种新的能带结构特征。
【Abstract】 Porous silicon(PS) film is obtained by high current attack in concentrated hydrofluoric acid solution. The experimental results of the optical absorption spectrum were analyzed,which show that the absorption edge of PS is on the visible region. The PS has a srtonger optical absorption and a blue shift of the absorption edge compared with the crystal silicon. The measurement and analysis of the optical absorptoin spectrum indicate the changing of the band structure of PS.
- 【文献出处】 固体电子学研究与进展 ,RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS , 编辑部邮箱 ,1996年04期
- 【分类号】O472.3
- 【被引频次】1
- 【下载频次】193