【摘要】 采用半经验紧束缚近似方法对生长在ＧａＳｂｘＰ１－ｘ（００１）衬底上ＧａＰ的电子能带结构进行计算。ＧａＰ为间接能隙型的半导体，计算表明，当衬底中Ｓｂ组分ｘ≥０．５７时，应变的ＧａＰ薄层由间接能隙变成直接能隙的半导体。因应变，ＧａＰ原来简并的最低Ｘ点导带能级及价带顶（Γ点）能级发生分裂。随着Ｘ增大，分裂值变大。文中最后计算了价带能级到导带底跃迁的振子强度，对发光效率作了讨论。更多还原

【Abstract】 T he energy band structures of a thin strained GaP layer Oil GaSh.P1-x (001) substrate are calculated by the semi-empirical tight-binding method in the paper. The calculated results show that the thin strained GaP layer can change its feature from an indirect gap into direct gap if the composition x is larger than 0. 57. Due to deformation, the degeneration of the lowest conduction band at X point and the top of valence band(at P point)is destroyed. The splitting values increase with the composition x. Finally, oscillator strength between the valence band and the bottom of conduction band is calculated. The light emission efficiency is also discussed.更多还原