【摘要】 运用ＸＰＳ法研究ＺｎＳ：Ｃｕ，Ｃｌ，Ｅｒ薄膜器件的界面态及所掺激活剂的纵向分布，认为氧吸附形成的ＺｎＳ薄膜的表面构态是产生薄膜界面态和界面陷阱能级的主要原因，对研究薄膜器件的激发过程有参考意义。更多还原

【Abstract】 The interface states in ZnS:Cu,Cl,Er thin film and the longitudinal distribution of the activators doped in the film are investigated with XPS analysis method in this paper.It is considered that the surface structure states fromed by oxygen absorption are the main cause of inducing interface states and energy levels of interface traps.The results are referable in study of the electroluminescent excitation process of the thin film devices.更多还原