节点文献
新型功率器件MCT的计算机模拟
The Simulation and Analysis of A New Power Device:MOS Control Thyristor
【摘要】 采用了合理的物理模犁和精确的数值解法,对MCT进行了一维数值求解,得到了器件内部载流子分布和电场分布以及外部端特性。这些结果对MCT的优化设计具有实际指导意义。
【Abstract】 One-dimensional solution of MOS Controlled Thyristor (MCT) is obtained by using a reasonable physical model and accurate numerical method. Inner carrier distribution and electrical field distribution as well as external terminal characteristics of the device are given. These results are much significant for optimizing the device design.
【关键词】 MCT;
数值解法;
载流子分布;
电场分布;
【Key words】 MCT(MOS Controlled Thyristor) Numerical Method Carrier Distribution Electrical Field Distribution;
【Key words】 MCT(MOS Controlled Thyristor) Numerical Method Carrier Distribution Electrical Field Distribution;
【基金】 江苏省自然科学基金
- 【文献出处】 固体电子学研究与进展 ,RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS , 编辑部邮箱 ,1996年02期
- 【分类号】TN389
- 【下载频次】42