【摘要】 本文报导了用国产常压ＭＯＣＶＤ系统生长ＧａＩｎＰ材料．研究ＧａＩｎＰ的生长特性，用光致发光、扫描电镜、Ｘ光双晶衍射对材料进行表征．发现Ⅴ／Ⅲ比对ＧａＩｎＰ的光学特性有很大影响．在温度６８０℃，Ⅴ／Ⅲ比为９０的条件下得到Ｇａ（０．５１）Ｉｎ（０．４９）Ｐ外延层的光致发光谱的半高宽为２６ｍｅＶ，这是目前报导的最好结果．Ｇａ（０．５１）Ｉｎ（０．４９）Ｐ的本征载流子浓度为１．１×１０（１５）ｃｍ（－３），晶格失配为４×１０（－４）．更多还原

【Abstract】 GaInP have been. grown on GaAs substrates by metalorganic chemical vapor deposition(MOCVD) in a horizontal, atmospheric pressure reactor. The growth characteristic of GaInP wes studied by PL measurement, SEM, X-ray double crystal diffraction.Ⅴ/Ⅲ ratio influenced the optics quality of GaInP. Featureless surface morphologies Ga0.51In0.49P were obtained. At a Ⅴ/Ⅲ ratio of 90, temperature was 680℃, the epilayer had photoluminescence(PL) FWHM of 2 6 meV at 300 K, the best reported results to date. The background carrier concentration of Ga0.51In0.49P was 1. I × 1015cm-3. The mismatch of Ga0.51In0.49P was 4 × 10-4.更多还原