【摘要】 采用等离子体增强化学气相沉积（ＰＥＣＶＤ）方法在４０Ｃｒ钢（含Ｃｒ０．８％～１．１％）或铜等金属基片上沉积氨化硅薄膜。沉积温度为２５０℃时，制备的薄膜厚度为０．２～０．４μｍ，电阻率为８×１０￣（１６）Ω·ｃｍ，介质击穿场强达到１×１０￣７Ｖ／ｃｍ。用ＸＰＳ谱研究了薄膜的结构和成分，并分析了沉积时不同的工艺参数对薄膜绝缘耐压性能的影响。更多还原

【Abstract】 A silicon nitride film on metal substrat has been prepared at 250℃ by plasma-enhancedchemical vapor deposition (PCVD).Of the said film the thickness is 0.2～0.4μm,the resistivity 8×10￣(16)Ω.cm and the breakdown strength 1×10￣7 V/cm.The structure and composition of the film were analyzed with Xray photo electron spectroscopy.The effect of the process parameters on the resistivity and breakdown strengthof the film was also studied.更多还原