【摘要】 利用射频磁控溅射方法在Ｓｉ（１００）衬底上生长ＺｒＯ２薄膜作为缓冲层，以阻止Ｓｉ与ＹＢＣＯ的反应，然后用直流磁控溅射方法，在其上做出了Ｔｃ为８５Ｋ的ＹＢＣＯ超导薄膜。该文对这种ＹＢＣＰ／ＺｒＯ２／Ｓｉ结构的工艺条件进行了研究分析。更多还原

【Abstract】 In order to prevent the reaction between silicon and YBCO, ZrO2 thin film used sputtering as the buffer layer is prepared by RF magnetron sputting on Si(100) substrate.By using DC magnetron sputtering YBCO thin films with Tc up to 85K have been prepared on the buffer layers. In this letter the process of YBCO/ZrO2/Si structure is discussed.更多还原