【摘要】 锗硅材料的制造与硅平面工艺相容，且具有优良的电学、光学性能，被称为“第二代硅微电子技术”。在高速异质结双极型晶体管（ＨＢＴ）、调制掺杂场效管中获得应用，其中ＨＢＴ即将走向产业化，锗硅材料具有能带可调的特性，在光电子方面有其应用价值，锗硅材料做红外探测器有诱人的前景。更多还原

【Abstract】 In this paper, the properties of the GeSi material was summarized. It has exellent electronic、optical properties, and was compatible with silicon faced process. So GeSi material was named as “the second silicon microelectric technology”. It was applied to hetrojunction bipolar transistor、modulate doped field effect transistor because of its high mobility. It was utilized to made infrared dectector for its optical property.更多还原