【摘要】 叙述了ＳｉＧｅ／Ｓｉ异质结双极晶体管（ＨＢＴ）的设计考虑，双台面结构的制作方法，并制作出ｆ_Ｔ为９ＧＨｚ的ＳｉＧｅ／ＳｉＨＢＴ。同时根据对不同尺寸ＨＢＴ的测试结果得到分布参数是影响ｆ_Ｔ的重要因素之一。更多还原

【Abstract】 SiGe/Si HBT’s design is considered; the processing of a double mesa struncture is discussed. SiGe/Si HBTs with different sizes are fabricated, in which the maximum fT is up to 9GHz. Measurement shows that the distribution parameters are the main factors which influcence fT.更多还原