【摘要】 本文简述了IGBT的设计技术和制造工艺,对IGBT的I-V特性、开关特性及闩锁效应进行了系统的研究,结合实施工艺对IGBT的版图及工艺进行了优化设计.合作开发了适于制作IGBT的异型厚外延材料.成功地制作了10A/800V、20A/1050V的IGBT芯片,给出了试制样品的测试结果.更多还原

【Abstract】 In this paper the design technology and fabrication process of IGBT are simply described, I-V character、Switching character and latch up effects of IGBT are developed systemly also. 10A/ 800V, 20A/1050V IGBT sample are fabricated successfully with optimum design and thick P+-N epitaxial substrate production, Experimental and tested results of IGBT sample are given.更多还原