【摘要】 本文报道采用改进的磁控Ｓ枪，利用直流反应磁控溅射技术，通过合理地控制调节，已成功地在硅衬底上制备出Ｃ轴取向高度一致的ＺｎＯ纳米级材料，其Ｘ射线衍射半高宽仅为０．７°．在用ＸＲＤ，ＸＰＳ等手段对其成份、结构分析的基础上，进一步对其反应溅射过程进行了研究．更多还原

【Abstract】 Abstract High-quality 2nO films were prepared on silicon substrate by DC reactive magnetron sputtering. The films were characterized by X-ray Photoelectron Spectroscopy(XPS)and X-ray Diffraction(XRD) analysis. The nano-ZnO films grow at C axis orientation and the full width at half maxium (FWHM) is only about 0. 7°.更多还原