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注Si＋热氧化SiO2薄膜的蓝光发射及其退火特性
Blue Luminescence and Annealing Characteristic of Si￣+-Implanted SiO2 Films on Crystalline Silicon
【摘要】 对单晶硅片上热生长的ＳｉＯ２薄膜注入Ｓｉ＋，注入能量为１２０ｋｅＶ，剂量为２×１０１６ｃｍ－２．在～５．０ｅＶ的光子激发下，注Ｓｉ＋氧化膜可生产～２．７ｅＶ的蓝光发射．在退火处理中，发光强度先随退火温度上升而增大，在５００～６００℃时达到最大值，此后逐渐减小．这种蓝光发射是由于注入的过剩Ｓｉ引起氧空位缺陷而产生的．
【Abstract】 Abstract Thermally grown SiO2 films on crystalline silicon wafers were implanted with Si+ at an energy of 120 keV and with a dose of 2×1016cm-2, Under excitation of 5. 0 eV photons, the St+-implanted SiO2 films exhibit blue luminescence peaked at about 2. 7eV.The peak intensity increases as annealing temperature and reaches its maximum at 500～600℃, and then decreases when the annealing temperature is higher than 600C. The blueemission is caused by oxygen vacancies in the films.
【基金】 国家自然科学基金
- 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1996年10期
- 【分类号】O649.4
- 【被引频次】8
- 【下载频次】71