【摘要】 本文利用薄膜双栅ＳＯＩ器件在阈值电压附近硅膜中的常电位近似，得到一个通用的薄膜双栅ＳＯＩ器件电流模型．数值模拟结果与实验值吻合较好．文中特别对其它模型所不适用的正背栅具有不同参数的双栅ＳＯＩ器件进行了源漏电流的模拟，并对结果进行了分析．更多还原

【Abstract】 Abstract Based on the approximation of constant potential distribution across the entire silicon film near threshold, a general drain current model for thin film double-gate MOS/SOl devices is presented. The prediction agrees well with the experimental data near the subthreshold region. We especially simulate the Id-Vg characteristics.of thin film doublegate SOl devices fabricated on SIMOX material under different parameters while other models are not applicable, and explain the results.更多还原