【摘要】 本文针对衬底正偏的ＭＯＳＦＥＴ的解析模型进行了讨论．在已有ＭＯＳＦＥＴ理论基础上，仅引入一个参数ξ，便得到了全偏压范围的ＭＯＳＦＥＴ的解析表达式的通式．当ξ＝１时，该表达式与已知的衬底负偏的ＭＯＳＦＥＴ的表达式相同；当ξ＝０．８时，可得到衬底正偏的ＭＯＳＦＥＴ的近似解析式．实验结果验证了该模型的正确性．更多还原

【Abstract】 Abstract In this paper,We emphasize the analytic model of MOSF.ET under positive substrate-source bias. Based on conventional theory of MOSFET,we have introduced a parameter in the general expression for MOSFET characteristics.It can be used in bothnegative bias and positive substrate bias:ξ=1 for negative bias and ξ=0.8 for positivebias.The validity of the model is proven by experimental results.更多还原