【摘要】 Ｂ＋注入ｎ（Ｓｉ）－ＧａＡｓ层，经高温退火在ＧａＡｓ晶格恢复过程中，Ｂ将占据ＧａＡｓ晶格中一定位置成为替位Ｂ，当Ｂ取代Ａｓ位，则形成双受主ＢＡｓ．当Ｂ取代Ｇａ位，并形成络合物ＢＧａＶＡｓ，将促使Ｓｉ占Ａｓ位，形成受主ＳｉＡｓ和受主络合物ＢＧａＳｉＡｓ．由于所产生的受主与ｎ型层中施主ＳｉＧａ的补偿，减少了ｎ型层的载流子浓度，即Ｂ的化学补偿效应．本文采用霍耳测量及光致发光测量对Ｂ的补偿行为进行分析．更多还原

【Abstract】 Abstract Boron ions were implanted into n(Si)-GaAs. The implanted B can sit in GaAs lattice during the lattice restoration by elevated temperature annealing. When a boron atom occupies As sublattice site, a double acceptor BAB is formed. When a born atom occupies Ga site and complex BGa VAs is formed causing Si to occupy As site. The acceptors SiAs,and BGa SiAs decrease carrier concentration of the n-type layer. This is the chemical compansation effect of Boron in GaAs. In this paper, we investigated the compensation behaviour of Boron ions in n(Si)-GaAs by Hall effect and photoluminescence.更多还原