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MOVPE生长Al0．35Ga0．65As／GaAs量子阱结构的光致发光
Photoluminescence of Al0.35Ga0.65As/GaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy
【摘要】 用常压ＭＯＶＰＥ系统，采用ＡｓＨ３、国产ＴＭＧａ和ＴＭＡＩ生长了ＡＩ０．３５Ｇａ０．６５Ａｓ／ＧａＡｓ多量子阱结构．在１１Ｋ下，宽度为１０Ａ的阱ＰＬ半峰竞最窄为１２ｍｅＶ，表明量子阱结构具有陡峭的界面．光致发光（ＰＬ）测试结果显示，较低的生长速率和适当的生长中断时间有利于改善ＰＬ半峰宽．
【Abstract】 Abstract Al0.35Ga0.65As/GaAs Multiple Quantum Well (MoW) structures were grown by atmospheric metalorganic vapor phase epitaxy (MOVPE) using home-made sources TMGa and TMAl. The photoluminescence (PL) measurements were carried out at 11K to characterize the optical properties of the QW structures groWn at different growth rates and with varied growth interruption times. The narrowest PL full width at half maximum (FWHM) of 10A well is 12meV, indicating abrupt AIGaAs/GaAs interfaces. The results of PL measurements show that low growth rate and proper growth interruption time are helpful to obtain narrower FWHM.
- 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1996年04期
- 【分类号】O471
- 【被引频次】1
- 【下载频次】55