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偏心Bridgman-Hg1-xCdxTe晶体生长S-L界面形状的数值模拟

Numerical Simulation of S-L Interface Shape of Asymmetrical Bridgman-Hg1-xCdxTe Crystal Growth

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【作者】 王培林; 邓开举; 张国艳; 周士仁;

【Author】 Wang Peilin; Deng Kaiju;Zhang Guoyan and Zhou Shiren(Department of Control Engineering, Harbin Institute of Technology, Harbin, 150001 )

【机构】 哈尔滨工业大学控制工程系;

【摘要】 用三维数值模拟方法研究了偏心Bridgman-Hg1-xCdxTe晶体生长系统S-L界面附近的温度分布.考察了偏心程度、安瓿与炉膛直径相对大小以及炉膛温度分布等对倾斜S-L界面的影响情况.结果表明,偏心温度场可提高晶片上一较大区域内的横向组分均匀性.ψ=0、π面上的等温线分布可作为确定切片倾角的依据

【Abstract】 Abstract The temperature distribution around the S-L interface of the asymmetrical Bridgmn-Hg1-xCdxTe crystal growth system has been studied by using the threedimensional numerical analysis method. The effects of asymmetrical degree, the size of the ampoule compared with the furnace and the temperature distribution in the furnace on the inclined S-L interface, etc., have been investigated. The results show that the asymmetrical temperature field is able to increase the radial compositional uniformity in a large area. ψ=0 and the isotherm distribution on the π plane can be used as basis in position determination of the cut slice.

  • 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1996年01期
  • 【分类号】O471.4
  • 【被引频次】2
  • 【下载频次】32
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