【摘要】 采用金属有机物化学汽相淀积／液相外延生长工艺和多量子阱－分布反馈双沟平面隐埋异质结结构，实现了１３１０ｎｍＩｎＧａＡｓＰ／ＩｎＰ多量子阱分布反馈激光器高功率输出。２５℃时，尾纤输出功率（Ｐｆ）大于１０ｍＷ，阈值电流（Ｉｔｈ）小于１８ｍＡ，斜率效率（Ｅｓ）大于２２Ｗ／Ａ，边模抑制比（ＳＭＳＲ）大于４０ｄＢ，单纵模产率（Ｙ）超过７０％更多还原

【Abstract】 A high power 1 310 nm InGaAsP/InP multiquantum well distributed feedback laser(MQW DFB LD) with DC PBH structure has been developed by MOCVD/LPE techniques.The fiber output power of module P f is greater than 10 mW at 25 ℃,threshold current I th is less than 18 mA,slope efficiency E s is greater than 0.22 W/A,side mode suppression ratio SMSR is greater than 40 dB and single mode yield Y is greater than 70%.更多还原