【摘要】 ：研究用水平反应室低压金属有机物汽相外延（ＬＰ－ＭＯＶＰＥ）方法在Ｃ面及Ｒ面蓝宝石衬底上外延生长ＧａＮ单晶。讨论了反应室中气流分布和汽相反应对ＧａＮ外延生长的影响；提出了不同的衬底晶向对外延ＧａＮ表面形貌产生影响的机制。更多还原

【Abstract】 Using horizontal reactor LP-MOVPE,the high quality GaN epitaxial lay er is grown on C-plane and R-plane sapphire substrate.The effects of gas flow distrlbu tion and vapour phase reaction in the reactive chamber on the GaN epitaxial growth are dis cussed;and a plausible model is proposed to explain the effect of substrate orientation on the epitaxial GaN surface morphology.更多还原