【摘要】 组分元素和杂质在多层薄膜样品中深度分布的ＳＩＭＳ剖析结果总是偏离其真实的分布情况，这是由一次离子溅射样品时的物理过程以及溅射坑底的不平整所造成的。轰击离子在样品内所引起的混合效应，以及坑底的不平整导致了某一时刻的二次离子来自样品中的不同深度。因此，为了提高ＳＩＭＳ分析的深度分辨率，必须注意克服这两种影响因素．更多还原

【Abstract】 The depth profile of an abrupt interface and a multi-layer structure by SIMS analysis usually is distorted. The interface is spreaded,so that the depth resoluteon descends. The spread of interface is caused by the mixing effect during the sputtering process and the uneven bottom of the crater. In order to rise the depth resolution of SIMS, it is important to decrease the two kinds of the effects that described above by the possibility.更多还原