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X射线镂空硅掩模在同步辐射X射线深层光刻中的应用

APPLICATION OF X-RAY STENCIL SILICON MASK IN SYNCHROTRON RADIATION X-RAY DEEP LITHOGRAPHY

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【作者】 孙宝银陈梦真朱樟震伊福廷

【Author】 Sun Baoyin; Chen Mengzhen; Zhu Zhangzhen; Yi Futing (Microelectronic R & D Center,CAS,Beijing) (Institute of High Energy Physics,CAf,Beijing)

【机构】 中国科学院微电子中心!北京100010中国科学院高能物理研究所!北京100039

【摘要】 阐述了X射线镂空硅掩模的研制及其在同步辐射深层光刻中的应用。在北京同步辐射国家实验室X射线光刻装置上,采用本文研制的X射线镂空硅掩模获得胶厚为30~40μm、侧壁很陡、边缘很直的X射线深层光刻胶图形。

【Abstract】 The fabrication of X-ray stencil silicon mask and its application in X-ray deep lithography are presented in this paper. Special X-ray stencil silicon mask with excellent patterns of high contrast for shorter wavelength soft X-ray has been developed in our laboratory, which is found to be suitable for X-ray deep lithography experiments. Using such kind of X-ray stencil silicon mask,structured patterns of resist as thicker than 30μm with vertical side-walls and good edge profile have been obtained on the X-ray lithography appara- tus of the Beijing synchrotron radiation facility, BEPC national laboratory.

  • 【分类号】TN305.7
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